NCE01P18 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V
(Typ:85mΩ)
* Super high dense cell design
* Advanced trench process technology
* Reliable and rugged
It is ESD protested.
General Features
* VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V
(Typ:85mΩ)
* Super hig.
The NCE01P18 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
General Features
* VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V
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